Summary
Electronic systems are increasingly required to operate in extreme environments such as the surface of Venus, inside nuclear reactors, geothermal wells, and hypersonic aerospace platforms. Conventional silicon-based electronics fail at elevated temperatures because their electrical properties degrade rapidly above approximately 125 °C. Gallium nitride, a wide-bandgap semiconductor, offers superior thermal stability, radiation tolerance, and high-speed performance, making it a promising material for next-generation electronics in harsh environments. However, while individual gallium nitride tra
