Summary
Non-technical Abstract: The current memory technology in the commonly used hard drives is based on ferromagnetic materials that contain Cobalt or Iron. The operating speed limit for these materials is often in the gigahertz (1,000,000,000 Hz) regime. Another class of magnetic material known as antiferromagnets can support memory operation in the much higher terahertz (1,000,000,000,000 Hz) frequency. This project is to designed to realize the switching between the bit 1 and bit 0 memory states in antiferromagnets, and to measure how light converts into electric current in these two-bit state
