Summary
A diode laser device is made from semiconductor, a material with its electrical conductivity dictated by the quantities of negatively and positively charged mobile particles within itself, which are referred as electrons and holes, respectively. An n-type semiconductor possesses more electrons than holes while a p-type semiconductor has more holes than electrons. Traditional diode laser devices contain a key component equivalent to a p-n junction, where electrons and holes meet and recombine to emit light. Diode lasers with emission wavelengths in the infrared and visible spectral bands are wi
